Predicting InAs/GaAs Quantum Dot Laser Behavior Using Artificial Neural Networks

This paper presents a comprehensive modeling and simulation of an InAs/GaAs quantum dot laser with a planar cavity using artificial neural networks. Coupled rate equations for carrier and photon dynamics are employed to investigate the effects of key parameters, including injection current and carrier relaxation time. The study examines their influence on output power, threshold current, quantum efficiency, and laser switch-on dynamics. Furthermore, the impact of quantum dot and quantum well quality degradation is analyzed to provide deeper insights into device performance.

کلیدواژه ها:

Laser Performance ، Artificial Neural Network ، Carrier Dynamics ، Quantum Dot Laser