On increasing of density of field-effect heterotransistors in the framework of a level shifter influence of mismatch-induced stress and porosity of materials on technological process

In this paper we introduce an approach to increase density of field-effect heterotransistors in the framework of a level shifter. In the framework of a the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

کلیدواژه ها:

field-effect heterotransistors ، Transimpedance amplifier ، Optimization of manufacturing ، analytical approach for prognosis