Engineering the Electronic Structure in Titanium Dioxide via Scandium Doping Based on the Density Functional Theory Approach for Photocatalysis and Photovoltaic Applications

سال انتشار: 1402
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 37

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شناسه ملی سند علمی:

JR_IJCCE-42-3_003

تاریخ نمایه سازی: 17 خرداد 1404

چکیده مقاله:

Titanium dioxide (TiO۲) has received much attention, owing to applications in various areas including photocatalysis and photovoltaics. It is a wide band gap n-type semiconductor.  Production of p-type TiO۲ is challenging and interesting research work for its utilization in wider areas of applications. In this study, band structures and corresponding density of states of undoped and scandium (Sc)-doped TiO۲ with different concentrations of Sc doping are calculated using Density Functional Theory (DFT). Sc doping in TiO۲ converts intrinsically n-type TiO۲ into p-type TiO۲. An increase in doping concentration generates shallow acceptor levels ranging from ۱۰ meV to ۲۵ meV above the Fermi level. The study has the potential to improve the conductivity of TiO۲ via different concentrations of Sc dopants and produce p-type TiO۲ for applications in photocatalytic water-splitting technology in low-cost and eco-friendly hydrogen production and solar cell technology to support future energy demand.

نویسندگان

Ram Singh

Department of Physics, OP Jindal University, Raigarh, Chhattisgarh-۴۹۶۱۰۹, INDIA

Anurag Gautam

Department of Chemistry, Geethanjali College of Engineering and Technology, Cheeryal, Hyderabad, Telangana-۵۰۱۳۰۱, INDIA

Varun Rai

Department of Chemistry, ۳ Science Drive ۳, National University of Singapore, ۱۱۷۵۴۳, SINGAPORE

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