Insertion of the MnSnI₃ and CsGeI₃ Two Absorber ‎Layers in Order to Perform the Photovoltaic Behavior ‎of the Perovskite Solar Cell

This study suggests novel lead-free perovskite solar cell architecture with double absorber layers of CsGeI۳ and MASnI۳ to eliminate lead toxicity while maintaining high efficiency. Using SCAPS-۱D simulations, critical parameters-absorber layer thickness, doping density, and defect density- were systematically optimized to enhance photovoltaic performance. The optimized structure (FTO/ZnO/MASnI۳/CsGeI۳/NiO) achieved a power conversion efficiency (PCE) of ۳۲.۰۷%, with an open-circuit voltage (Voc) of ۱.۱۶۶ V, Short-circuit current density (Jsc) of ۳۰.۷۲ mA/cm², and fill factor (FF) of ۸۹.۵۲%. Key findings reveal that a ۱۲۰۰ nm thickness for both CsGeI۳ and MASnI۳ layers maximizes light absorption and carrier generation, while a doping density of ۱۰۲۰ cm-۳ strengthens the built- in electric field, improving charge separation. Defect density optimization highlights the critical role of the MASnI۳layer, where reducing defects to ۱۰۱۲ cm-۳ minimizes the recombination losses. Interface defect densities at NiO/CsGeI۳, CsGeI۳/MASnI۳, and MASnI۳/ZnO were optimized to ۱۰۱۰ cm-۳, with MASnI۳/ZnO exhibiting the highest sensitivity to defects. This work demonstrates the viability of lead-free perovskites for high-efficiency solar cells. The results pave the way for experimental validation and scalable production, aligning with safe renewable energy purposes.

کلیدواژه ها:

Lead-free perovskite solar cells ، ‎MnSnI۳/CsGeI۳ ، SCAPS-۱D ، ‎Photovoltaic parameters ، Defect ‎density optimization ، High efficiency ‎photovoltaic