Design and Analysis of Dielectric Spacer Dual Oxide Gate L Shaped Tunnel Field Effect Transistor with Extended Source and Drain

This paper presents the Spacer engineering Dual Oxide Gate L shaped Tunnel Field Effect Transistor (SDOG LTFET) incorporating Buried Oxide (BOX) in ۱۰nm technology. The proposed device employs an extended source and drain to minimize the leakage current, and the metal gate is connected under a recessed area to improve the on-state current. The work focuses on analyzing the performance characteristics of the proposed SDOG LTFET, prioritizing the stability and functionality using the Silvaco TCAD tool. The unique L-shaped architecture provides notable improvements in stability and effectively mitigates short-channel effects (SCE), and sub-threshold swing at a work function of ۱.۴eV. The proposed device demonstrates significant advancements in ON-state and OFF-state currents compared to conventional TFET design. A detailed comparative analysis underscores the advantages of the proposed device over the dual material gate TFET and conventional TFET. This work obtained the increased drain current of ۳.۱۸ ×۱۰-۶A, smaller sub-threshold slope (SS) of ۶۷ mV/dec, Ion/Ioff ratio of ۶ ×۱۰۹, and smallest DIBL ۶۱.۴۸ mV/V.  Therefore, with increased control gate length, there is also an increase in Ion state current and a decrease in Ioff state current for the proposed SDOG LTFET potential for low-power applications.

کلیدواژه ها:

Hafnium Oxide ، Sub threshold swing ، Drain induced barrier lowering ، threshold voltage ، Drain current