Improvement of Ion and Subthreshold Slope in a Novel Tunneling FETEmphasizing on Modified Current Mechanism

High on-current (Ion), and a sharp subthreshold slope (SS) are somedesirable characteristics, in particular for tunneling FETs (TFETs) operatingat low voltages. In this paper, our primary focus is on the modified currentmechanism (MC-TFET), which provides an integrated n-p-n BJT action in theon-state by dividing the source side into n+ and p+ regions. In this regime,electrons tunnel from the source valence band into the channel conductionband, increasing the hole concentration and the potential of the p+ source area.This activates the integrated BJT transistor by forward biasing the baseemitterjunction. The BJT current is then added to the TFET's usual tunnelingcurrent, greatly increasing the Ion from. Keeping Ioff unchanged, offers a verylow subthreshold swing (SS = ۲۱ mV/dec) and a high record gain of Ion/Ioff forthe MC-TFET structure, due to the steep switching. The suggested device willsatisfy the requirements for low power applications and meet the expectationsfor excellent logic performance

کلیدواژه ها:

Tunneling FET ، Bipolar junction transistor (BJT) ، on-current ، off-current ، subthreshold slope