Nitrogen-doped Graphene by (Oxygen-Nitrogen Plasma) method for use in HTL layer to increase Perovskite Solar cell efficiency

Nitrogen-doped graphene via oxygen-nitrogen plasma involves exposing graphene to a mixed plasma of oxygen and nitrogen gases. This process creates reactive species that incorporate nitrogen atoms into the graphene lattice, replacing some carbon atoms. The resulting nitrogen-doped graphene exhibits enhanced electrical, chemical, and catalytic properties due to the introduction of nitrogen functionalities. This method allows for controlled doping levels and uniform distribution of nitrogen across the graphene sheet. Nitrogen-doped graphene via oxygen-nitrogen plasma in the HTL (Hole Transport Layer) enhances charge carrier mobility, increases electrical conductivity, and improves the alignment of energy levels, thereby boosting the efficiency and performance of electronic and optoelectronic devices. Using nitrogen-doped graphene via the oxygen-nitrogen plasma method in the HTL layer of perovskite solar cells can increase efficiency by up to ۲۰-۳۰% compared to standard HTL materials. This significant improvement is due to enhanced charge transport and better energy level alignment.

کلیدواژه ها:

Graphene ، Nitrogen ، Plasma ، Perovskite ، doped