Dual-Phase-Lag Investigation of High-k Material in Novel Generation of Nanoscale MOSDevices

This paper investigates the numerical simulation ofdual-phase-lag heat transfer model with consideringthe effect of self-heating phenomenon in a sub-۱۰۰nm NMOSFET finite medium in order to determinethe importance of using high-k materials. In additionto the volume heat source (VHS) and thin heatsource (THS) models, a coupled electro-thermalmodel has been also considered in order to achievethe best method of simulating the deviceperformance. Then the DPL model is combined withthe conservation of energy in a specificnormalization procedure in order to model thenanoscale phonon transport in the transistor. Theboundary conditions are selected similar to whatexist in a real nanoscale NMOSFET. Thetemperature-jump boundary condition is used on allboundaries to consider the boundary phononscattering phenomenon at nanoscale. A three-levelfinite difference scheme has been employed toobtain the numerical results for an NMOSFET with۲۵ nm channel length corresponding to the Knudsennumber of ۴. The distribution of the volumetric heatgeneration, the temperature field and the hotspottemperature within the device are presented asresults and finally, the effect of using high-kmaterials on the electrical and thermal behavior ofthe transistor has been investigated.

کلیدواژه ها:

non-Fourier heat transfer ، temperaturedependentproperties ، nanoscale NMOSFET ، high-kmaterial