Comparing the methods of reducing recombination inthe ETL layer of perovskite solar cells and calculatingthe efficiency of each of the methods and the method ofdoping the layer with SnO۲
سال انتشار: 1403
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 104
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شناسه ملی سند علمی:
ICIRES19_001
تاریخ نمایه سازی: 4 دی 1403
چکیده مقاله:
To reduce recombination in the ETL layer ofperovskite solar cells, several methods are employed: surfacepassivation (۳۰-۴۰% improvement) reduces trap states at theperovskite/ETL interface, improving charge extraction;improving ETL material quality (۲۰-۳۰%) through bettercrystallinity and morphology decreases defects; optimizingenergy band alignment (۱۰-۲۰%) ensures efficient electrontransfer, minimizing energy losses; adding an interfacial layer(۱۰-۱۵%) between perovskite and ETL reduces directrecombination; and doping the ETL material (۵-۱۰%) enhancesconductivity and reduces trap-assisted recombination. Thecombined use of these techniques can significantly enhance thecell's efficiency.
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نویسندگان
Mehran Hosseeinzadeh Dizaj
PhD in ElectronicEngineeringFaculty of Electrical EngineeringIslamic Azad University, Central Tehran BranchTehran, Iran
Fatemeh Shahnavaz
PhD in Chemistry EngineeringFaculty of Chemistry EngineeringIslamic Azad University, Central Tehran BranchTehran, Iran
Shahed Chehrdoust Shishvan
PhD in Electronic EngineeringFaculty of Electrical EngineeringIslamic Azad University, Central Tehran BranchTehran, Iran