Effect of appropriate ETL on efficiency of CsPbI۳ perovskite solar cell device viaSCAPS simulation

سال انتشار: 1403
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 151

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شناسه ملی سند علمی:

MEMCONF13_032

تاریخ نمایه سازی: 15 آبان 1403

چکیده مقاله:

This study investigates the impact of an appropriate electron transport layer (ETL) on the efficiency ofCsPbI۳ perovskite solar cell devices using SCAPS simulation. The objective is to optimize the ETL toenhance device performance by analyzing various ETL materials and their influence on key parameterssuch as open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and overall powerconversion efficiency (PCE). Simulations were performed to compare the effectiveness of differentETLs, including TiO۲, PCBM, and SnO۲. The results indicate that SnO۲ as the ETL provides the highestefficiency due to its favorable energy band alignment and superior electron mobility, leading to reducedrecombination losses. The optimized device achieved a PCE of ۱۸.۷%, with a Voc of ۱.۱۵ V, Jsc of۲۲.۴ mA/cm², and an FF of ۷۵.۳%. This study concludes that selecting an appropriate ETL is crucial formaximizing the performance of CsPbI۳ perovskite solar cells, highlighting SnO۲ as a promisingcandidate for future high-efficiency solar cells..

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نویسندگان

Mir Alireza Faghani Tolon

Sharif university of technology, Tehran, Iran

Mohammadreza Falaki

Sharif university of technology, Tehran, Iran