Investigating the Impact of Temperature on MgSe Structural, Optical and Electrical Features to Optimize its Use in Optoelectronics

In this study, we used the electrochemical deposition technique to synthesize the MgSe material. The magnesium nitrate hexahydrate (Mg(NO۳)۲.۶H۲O) and Selenium (IV) oxide (SeO۲), are part of the electrochemical bath system. At a ۲θ angle, MgSe material shows a diffraction angle of ۱۵.۶۶۹o. The diffraction peaks at ۲θ = ۱۵.۶۶۹o, ۱۶.۴۵۲o, ۱۷.۴۲۶o, ۲۳.۴۸۹o, and ۲۷.۵۹۲o correspond, respectively, to the diffraction planes of ۰۰۲, ۱۰۰, ۱۱۱, ۱۱۲, and ۲۱۲ of MgSe material. The film thickness decreased from ۱۱۲.۸۱ to ۱۰۴.۴۲ nm with an increase in the precursor temperature of MgSe. As the conductivity of the films increases from ۱.۰۱ to ۱.۱۷ S/m, the resistivity decreases from ۹۸.۰۹ to ۸۵.۴۲ ohm/cm. In the UV range, the films showed high transmittance, surpassing ۷۰%. The films that underwent deposition at ۵۰ oC demonstrated the highest transmittance, with an average of ۷۲% in the visible and near-infrared spectrum. The reflectance value of every film that was deposited was over ۱۵%. The films deposited had energy band gaps ranging from ۱.۷۵ to ۲.۵۶ eV. As the temperature increased, the energy band gap also increased. The bandgap energy range found in this study is perfect for absorbing solar energy radiation above ۱.۷۵ eV, making it ideal for solar cell absorber layers.

کلیدواژه ها:

MgSe ، Bandgap energy ، Resistivity ، conductivity ، XRD