Influence of Precursor Temperature on the Bandgap Engineering of Zr-Doped CrS for Photovoltaic Application

The physical properties of Zr-doped CrS films were examined in-depth in this study, focusing on the influence of precursor temperature during electrochemical deposition for photovoltaic use. The spectra show a decrease in absorbance from ۳۰۰ to ۶۰۰ nm in the visible range and an increase from ۶۵۰ to ۱۱۰۰ nm in the ultraviolet range. The transparency of chromium sulfide films is enhanced by adding a zirconium dopant at precursor temperatures ranging from ۴۵ to ۵۵ oC. The energy bandgap of Zr-doped CrS and CrS varies between ۲.۳۵ and ۳.۳۳ eV. As the precursor temperature increases, the crystallite size of the CrS and Zr-doped CrS material increases. This shows a better quality and growth of the material's grains. Precursor temperature influences the crystal structure of CrS and Zr-doped CrS films. The studies revealed that variations in the precursor temperature influence the film's crystallinity, phase composition, and grain size.

کلیدواژه ها:

Semiconductor ، Zirconium ، CRS ، Bandgap energy ، optical ، XRD