Production of Iridium Metal Thin Films for Application as electrodes in DRAMs and FRAMs
سال انتشار: 1391
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 1,340
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شناسه ملی سند علمی:
SASTECH07_139
تاریخ نمایه سازی: 30 تیر 1392
چکیده مقاله:
Thin films of Noble metals such as Iridium have several potential applications in ICs. Electronic devices are fabricated on the integrated circuits that include transistor, capacitor and resistance. They can be used as electrodes in DRAMs and FRAMs, and as gate electrodes in MOSFETs. Noble metals are excellent metals for electrode fabrication because chemical stability, highly electrical resistance, highly work function and many of them can withstand highly oxidizing conditions. Emphasis is on Reaction mechanisms and limits, leakage currents, electrodes and electrode interfaces and deposition techniques.
کلیدواژه ها:
Atomic layer deposition ، precursor ، gate electrode ، dynamic and ferroelectric memories ، capacitors
نویسندگان
Sakine Shirvaliloo
University of Science and Technology And Young Researchers Club Miandoab, Iran
Hale Kangarloo
Faculty of Science, IAV, Urmia, Brench Urmia, Iran