Estimating Electrical Performance and conducting a comparative investigation between Heterojunction Strained and Conventional Gate All Around Nanosheet Field Effect Transistors

This study presents a version of the Gate All Around Nanosheet Field Effect Transistor (GAA NS FET) incorporating source heterojunctions and strained channels. We compare its performance with the Heterojunction GAA NS FET and the Conventional GAA NS FET, examining their electrostatic control effects on key parameters like gate capacitance, transconductance, and cut-off frequency. Our heterojunction GAA NS FET utilizes Germanium for the source, Silicon/Germanium/Silicon (Si/Ge/Si) for the channel, and Silicon for the drain. By integrating strain and adopting a heterojunction structure, we significantly enhance device performance. Before analyzing semiconductor devices, accurately determining model parameters is crucial. We use various equations to derive the electrostatic potential, estimate carrier generation, and account for transport behavior and recombination effects. Overall, our results show substantial improvements in drain current, transconductance, and unity-gain frequency, leading to superior RF performance compared to the conventional GAA NS FET.

کلیدواژه ها:

Nanosheet ، Gate All Around FET ، On-state ، Off-state.