Improving the photovoltaic performance of CdS/CdSe quantum dot-sensitized solar cellsusing an Al-ZnS ternary passivation layer

We have improved the photovoltaic characteristics of the CdS/CdSe quantum dot-sensitized solarcells(QDSSCs)by employing the Al-ZnS ternary passivation layer after the deposition of CdSe QDs, which caused alower charge recombination at the interfaces of TiO۲/CdS/CdSe/polysulfide and thereby a higher collection ofphotoelectrons in the TiO۲ film

کلیدواژه ها:

Quantum dot sensitized solar cells ، Photoanode ، Passivation layer ، Aluminium ion-doped ZnS ، Chargerecombination