Enhanced Energy Bandgap, Structural, and Electrical Conductivity of Electrochemically Synthesized FeSe Nanostructured Material for Photovoltaic Applications

FeSe material was synthesized using the electrochemical deposition technique. The Iron nitrate nonahydrate (Fe(NO۳)۲.۹H۲O) is a part of the electrochemical bath system. FeSe material exhibits a diffraction value of ۱۴.۳۷۲o at ۲θ. The diffraction peaks at ۲θ = ۱۴.۳۷۲o, ۱۵.۰۲۷o, ۱۹.۱۱۲o, ۲۳.۵۷۵o ۲۶.۶۲۳o ۳۲.۲۹۲o, and ۳۴.۲۴۲o correspond, respectively, to the diffraction planes of ۰۱۱, ۱۰۱, ۱۱۱, ۱۱۲, ۲۰۰, ۲۱۱, and ۲۱۲ of FeSe material. The results showed that longer deposition time resulted in lower resistivity and higher conductivity. Longer deposition times lead to an increase in the thickness and grain size of the FeSe films, which can affect the electronic band structure. Iron selenide material showed a direct transition bandgap ranging from ۲.۱۰ to ۱.۶۵ eV at deposition times of ۵ to ۲۰ seconds. The resistivity and conductivity of FeSe thin films was synthesized at various deposition times (۵-۲۰ seconds). The results showed that longer deposition time resulted in lower resistivity and higher conductivity. The reflectance increases as the deposition time increased. Iron selenide material showed a direct transition bandgap ranging from ۲.۱۰ to ۱.۶۵ eV at deposition times of ۵ to ۲۰ seconds.

کلیدواژه ها:

FeSe ، Bandgap ، optical ، Structural ، Resistivity ، conductivity