Behavior of functionally graded semiconducting rod with internal heat source under a thermal shock

The research article investigates the behavior of a functionally gradedsemiconducting rod with internal heat source of length l under the thermal shock. A sudden heat source is applied to the left boundary ofthe finite rod. The equations of motion are solved analytically and the analytical expressions of displacement, carrier density, temperaturedistribution and stresses are obtained. The numerical values of these expressions are calculated and presented graphically to show the effect of non-homogeneity parameter on the components. The variations of the parameters are shown for different theories of thermoelasticity namely modiffed Green-Lindsay(MGL) theory, Green-Lindsay(GL) theory, Lord-Shulman(LS) theory and Coupled(CT) theory.

کلیدواژه ها:

Semiconducting ، Functionally Graded ، heat source ، Carrier density ، internal heat source