Growth and Characterization of Thin MoS۲ Films by Low- Temperature Chemical Bath Deposition Method

Transition metal dichalcogenide (TMDC) materials are very important inelectronic and optical integrated circuits and their growth is of great importance in thisfield. In this paper we present growth and fabrication of MoS۲ (Molibdan DiSulfide)thin films by chemical bath method (CBD). The CBD method of growth makes itpossible to simply grow large area scale of the thin layers of this material in lowertemperatures (near room temperature) and atmosphere pressure in comparison to costlycomplicated growth methods. The results show the effect of growth temperature andtime on the quality of layers and XRD measurements were performed for analysis ofcrystalline structure of layers. The results show that for the bath temperature of ۶۰oCand for ۷۵ min growth time, better quality of layers can be obtained with low intensity.The low intensity of XRD peaks belongs to poor crystalline structure of layers. Forhigher bath temperatures, the films lose their uniformity. The results were confirmed bySEM images.

کلیدواژه ها:

Transition Metal Dichacogenide ، Growth ، Chemical bath deposition ، Molybdenum disulfide