Design and Performance Analysis of ۶H-SiC Metal-Semiconductor Field-Effect Transistor with Undoped and Recessed Area under Gate in ۱۰nm Technology
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Department of Electronics and Communication Engineering, Princeton Institution of Engineering and Technology for Women, Hyderabad, India
Department of Electronics and Communication Engineering, Kodada Institute of Technology and Science for Women, Kodad, TS, India
Department of Electronics and Communication Engineering, Teegala Krishna Reddy Engineering College, Meerpet, Hyderabad, TS, India
Department of Electronics and Communication Engineering, Sana Engineering College, Kodad, TS, India
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, India
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, India
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, India
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