Novel Structures of Double Gate Ferroelectric Dopingless Tunneling Field-Effect Transistors

In this paper, the novel structures of double gate ferroelectric dopingless tunneling field–effect transistor are investigated. In these structures, Si:HfO۲ ferroelectric material is layered as gate stack above the high-K material of HfO۲/TiO۲. The incorporation of two booster technologies such as negative capacitance effect and charge plasma concept helps in boosting the device performance. The proposed device structure is expected to have ultra-steep subthreshold due to its ferroelectric gate stack and process variation resistant properties due to the electrostatically doped source and drain. Furthermore, many DC parameters have also been discussed as it has the major influence in performance of tunneling field-effect transistor.

کلیدواژه ها:

Double gate ، Ferroelectric ، Dopingless ، Tunneling field–effect transistor