Design of ۰.۴ V operational amplifier using low-power techniques

In this paper a low-power low-voltage CMOS operational amplifier (op amp) using sub-threshold region of MOSFET for bio-medical instrumentation operating with a ۰.۴ V supply is described. A two stage operational amplifier is designed and simulated using ۰.۱۸ μm CMOS technology. Two types of low-power low-voltage design techniques        (a) bulk-driven (b) dynamic threshold voltage MOSFET (DTMOS) are used. With bulk-driven technique, the open loop gain is ۶۹.۸۸ dB, the unity gain-bandwidth (UGBW) is ۸۷.۱ kHz, CMRR obtained is ۸۳ dB and phase margin is ۸۸.۷۸ degree with ۱۰pF load. The power consumption is ۱.۸ μW. With DTMOS technique, the open loop gain is    ۸۳.۳۱ dB, the unity gain-bandwidth is ۷۵۸.۶ kHz, CMRR obtained is ۱۵۷.۱ dB and phase margin is ۷۱.۵ degree with ۱۰pF load. The power consumption is ۱.۸ μW. DTMOS technique provides high unity gain-bandwidth and high open loop gain as compared to bulk-driven technique.

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