Effect of Ion Implantation on the Resistance of Channel Region in the LDMOSFET

In this paper we show the effect of ion implantation on the resistance of the LDMOSFET. In the ion implanted channel (IIC) LDMOSFET the channel region charge ismodified, thus the inversion layer charge is changed. Since the resistance in a MOSFET is determined by the inversion layercharge, the resistance of the channel region may be varied. By employing the IIC structure, the inversion layer charge decreases and thus the resistance increases.

کلیدواژه ها:

IIC LDMOSFET ، ion implantation ، inversion layer charge ، channel region resistance