Investigating the methods of improving the performance of field effect diode for use in nanotechnology

سال انتشار: 1402
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 335

فایل این مقاله در 12 صفحه با فرمت PDF قابل دریافت می باشد

استخراج به نرم افزارهای پژوهشی:

لینک ثابت به این مقاله:

شناسه ملی سند علمی:

EMAECONF02_032

تاریخ نمایه سازی: 31 خرداد 1402

چکیده مقاله:

Another field-effect diode, or FET, is used in modern electronic circuit components such as telecommunications chips, amplifiers, and other electronic devices. The main goal of improving the performance of the field effect diode is to increase the power and reduce the noise factor in these devices. In order to improve the performance of the field effect diode, there are several methods, some of which are mentioned below:۱- Design improvement: By optimizing the design of the field effect diode, its performance can be improved.۲- Improving the manufacturing process: By improving the manufacturing process of the field effect diode, more quality and accuracy can be obtained in the manufacturing of these devices. ۳- Use of optimal materials: by using optimal materials in the manufacture of field effect diode, its performance can be improved.۴- Improving the structure: by improving the structure of the field effect diode, its performance can be improved.

کلیدواژه ها:

Field Effect Diode (FED) ، Side Contacted FED (S-FED) ، Band-To-Band-Tunneling(BTBT) ، ION/IOFF Ratio

نویسندگان

Eslam Dost Amir Mahdi

Student of Electronic Engineering,Chamran University,Guilan.iran

Khoshnud Mostafa

Electronice Engineering Department,Chamran University,Guilan.Iran