A New Analysis, Design and Fabrication of DVB-T/T۲ LDMOS UHF Broadband Amplifier

In this paper we want to design linear amplifiers for the Multi Frequency Network (MFN) or Single Frequency Network (SFN) digital terrestrial applications for Digital Video Broadcasting-Terrestrial (DVB-T/T۲) transmitters with frequencies of ۴۰۰ to ۹۰۰ MHz, so to achieve this aim, we have used Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor technology has been used. The RF input signal reaches the divider ballun, and then the input of both LDMOS transistors is given and the output of two transistors by the collector balloon reaches the output of the amplifier. We have simulated this design by using the Agilent Design System (ADS) software simulator with a gain more than ۲۴ dB, the (Inter Modulation Distortion (IMD) signal has been attenuated from -۲۹ to -۵۲.۵dBc and Power Added Effeciency (PAE)  from ۴۸ to ۶۶% with ۴-stage matching network consisting of capacitors and microstrips with a drain bias voltage of ۲۸ volts and gate bias voltage of ۲.۸۶ volts in the frequency range ۴۰۰ to ۹۰۰ MHz. Eventually all of the circuit is designed on a printed circuit board.

کلیدواژه ها:

Multi Frequency Network ، Digital Video Broadcasting-Terrestrial ، Power Amplifier ، microstrips