Impact of p-type semiconductor substrate on the transient response of metal-semiconductor-metal photodetector
سال انتشار: 1402
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 166
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شناسه ملی سند علمی:
JR_JTAP-17-1_008
تاریخ نمایه سازی: 9 اردیبهشت 1402
چکیده مقاله:
In this paper, using finite difference method, the effect of adding a p-layer at the back of a metal-semiconductor-metal (MSM) photodetector (PD) on the spatial electric charge distribution and the transient response of the device is numerically studied. To this aim, the fundamental equations of the semiconductor device, i.e., two current continuity time-dependent equations have been considered coupled with Poisson's equation. The I-V curve of the MSM photodetector is obtained as the main characteristics of each semiconductor device. Moreover, the variations of electrostatic potential, electron and hole concentrations are determined in the MSM photodetector with a p-layer at the back of the active layer. It is observed that the peak transient response of an MSM device is improved by back-gating the device as more electrons are injected to the semiconductor layer and the slower charge carriers (the holes) to be removed from the top circuit.
کلیدواژه ها:
MSM Photodetector ، p-type layer ، Continuity and Poisson’ s Equations ، Numerical Solution ، Finite difference Method
نویسندگان
Ali Barkhordari
Faculty of Physics, Shahid Bahonar University of Kerman, Kerman, Iran
Hamid Mashayekhi
Faculty of Physics, Shahid Bahonar University of Kerman, Kerman, Iran
Şemsettin Altındal
Department of Physics, Faculty of Sciences, Gazi University, Ankara, Turkey
Süleyman Özçelik
Department of Photonics, Faculty of Applied Sciences, Gazi University, Ankara, Turkey
Yashar Azizian-Kalandaragh
Photonics Application and Research Center, Gazi University, Ankara, Turkey