Simulation Study of Cs۲TiBr۶ Perovskite Solar Cells Using Graphene Oxide as a Novel HTL Layer Using SCAPS ۱-D

Highly unstable absorber layers along with costly Hole Transport Materials(HTMs) have been the main problems in the perovskite-based photovoltaic industry recently. Here in this study, we intend to meet both these problems by introducing a non-toxic cesium-based absorber layer and low-cost material, Graphene Oxide (GO) as the Hole Transporting Layer (HTL). We use the Solar Cell Capacitance Simulator Program (SCAPS) to study the various output parameters of the device with the structure GO/Cs۲TiBr۶/TiO۲. Physical properties like the thickness of the absorber and hole transporting layers, the role of the layer interfaces, the effect of electron affinity, optical properties like the band gap of the absorber and hole transporting layer, electrical properties like the parasitic resistance, and finally the influence of operating conditions like the temperature on the working of the device was found out. The results show that a thickness of ۱ μm for absorber and ۰.۱ μm for HTL is suitable. Also, the optimum value for front and back interface layers were ۱۰۱۰ cm-۳ and ۱۰۱۶ cm-۳ respectively. Resistance values were fixed at ۲ for series and ۴۰ for shunt resistance. The electron affinity doesn’t seem to have much effect on the device performance while with the increase in temperature the performance of the device deteriorated. The highest efficiency that we obtained from the optimized device was ۱۵.۳%. In short, this unprecedented work shows that Cs۲TiBr۶ - GO based devices are suitable candidates to achieve highly efficient, eco-friendly, all-inorganic perovskite solar cells.

کلیدواژه ها:

Perovskites ، SCAPS ، Graphene oxide ، Cs۲TiBr۶ ، Numerical Simulation