Two Dimensional Analytical Modeling and Simulation for Junctionless Tunneling Field Effect Transistors
سال انتشار: 1401
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 216
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شناسه ملی سند علمی:
ECICONFE07_093
تاریخ نمایه سازی: 31 فروردین 1402
چکیده مقاله:
In this study, a ۲-D explicit analytical drain current model for junctionless tunneling field
effect transistor (J-TFET) is proposed. The potential profile is found by solving the
Poisson’s equation. From the potential model, the electric field is derived and is utilized to
extract the expression for the drain current by analytically integrating the band to band
tunneling generation rate over the tunneling region. The proposed model predicts the
transfer (IDS-VGS) and the output characteristics (IDS-VDS) of the J-TFET with a good
accuracy. The validity of the developed model is examined by ۲-D simulation results and
quite excellent agreement is achieved.
کلیدواژه ها:
Analytical model ، Poisson’s equation ، junctionless tunneling field effect transistors (J-TFET) ،
surface potential ، ۲D TCAD simulation.
نویسندگان
Morteza Rahimian
Faculty of Electrical, Biomedical and Mechatronics Engineering, Qazvin Branch, Islamic Azad University, Qazvin, Iran