N-P-N Bipolar Action in Junctionless TFET: A Modified Current Mechanism for Electrical Performance Improvement

In this paper we study the device physics of a technique for realizing an n-p-n bipolar transistor action in the source side of a junctionless tunneling FET (BJ-TFET). In the onstate, electrons tunneling from source side into the channel region, leads to enhancement of the holes concentration as well as the potential in the source region. This drives a built-in BJT transistor by forward biasing the base-emitter junction, with the source acting as a ptype region. Sharp switching of the J-TFET and high BJT current gain results in favorable high on-state current (۲.۱۷×۱۰-۶ A/μm), and sub ۶۰ mV/dec subthreshold swing (~ ۵۰ mV/dec) at low supply voltages. This approach modifies the current mechanism thanks to the triggered BJT and makes the proposed structure more attractive for scaling requirements in future low power applications.

کلیدواژه ها:

Junctionless TFET (J-TFET) ، bipolar junction transistor (BJT) ، on-state current ، subthreshold swing ، band to band tunneling (BTBT) ، ۲D TCAD simulation.