Workfunction Engineering of Dual Metal Double Gate TunnelField Effect Transistor for Power Relay Application

In this paper, a comparative study of workfunction engineering in dual metal double gate tunnel fieldeffect transistor (DMDG TFET) based on hetero dielectric gate material for power relay application ispresented. On one hand, the DMDG technique offers the flexibility to have low as well as high workfunction metals at the gate to control the individual portion of the transfer characteristics. This results inpragmatic increase in ON current, improved subthreshold slope and reduced threshold voltage. On theother hand, the DMDG technique is used along with the hetero dielectric gate material to optimize theperformance of Silicon based TFET. The hetero dielectric that we have used at the gate is a combinationof SiO۲ and HfO۲. The ۲-D device simulations are performed using Sentaurus TCAD and the results thusobtained are discussed using energy band diagram, tunneling barrier width. On application of heterodielectric to the Si DMDG TFET, the advantages of both the techniques combines, and it results in higherION/IOFF (۲×۱۰۹) compared to the mono dielectric case (۲.۵×۱۰۸). Also, the average subthreshold slopeimproves from ۵۸ mV/decade in mono dielectric to ۴۸ mV/decade in hetero dielectric Si DMDG TFET. .

کلیدواژه ها:

Power relay application ، Workfunction engineering ، Dual metal double gate (DMDG) ، Tunnel field effect transistor (TFET).