Electronic transport properties of Disordered Armchair Carbon nanotubes

Since the discovery of carbon nanotubes (CNTs) in 1991[1], the studies on the properties of various nanometer-scale tubular structures and their synthesis have never been stopped.Due to the development of micro-manufacture technology, miniaturization of microelectronic devices has led to intense research directed towards the development of molecular electronics [2,3] .The unique electrical and mechanical properties of carbon nanotubes have stimulated these efforts, because CNTs, especially single-walled carbon nanotubes (SWCNTs), exhibit a range of suitable properties for nano devices. To date, many basic Nano- electronic devices based on SWCNTs, such as molecular wires, diodes, and field-effect transistors, have been invented .In this work, we have studied the electronic transport properties of disordered Armchair CNTs attached to ideal semi-infinite order metallicCNTs, taking into account the effects of the strength of disorder. The transfer matrix (TM) method at the tight binding level is used for calculation localization length of the system. We found that the effect of increasing in the strength of disorder will cause the tendency of system towards nonmetallic behavior