Investigating the properties of silicon carbide and HfB۲ nanocomposite
سال انتشار: 1401
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 188
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تاریخ نمایه سازی: 25 اسفند 1401
چکیده مقاله:
Carbon parts have found wide applications in high temperature conditions, includingaerospace industries. But unfortunately, carbon parts, despite all the advantages theyhave, are quickly oxidized at a temperature of about ۵۰۰ degrees Celsius. The mainlimitation of using carbon parts at high temperatures is their strong oxidation. One of themost effective and widely used methods for protecting carbon materials is the use ofceramic coatings. As a mineral, silicon carbide has properties such as high thermalstability, high fracture toughness, low thermal expansion coefficient, etc. Therefore, it iswidely used in the manufacture of refractory devices, semiconductors, combustionengines, etc. Oxidation of silicon carbide can be active or passive. Active oxidationreduces the strength of the samples, while passive oxidation leads to the formation of acoherent silicon layer on the silicon carbide surface, thereby improving its performancein several applications. Silicon Carbide Composites As an interesting research topic,several works have been reported on the oxidation behavior of silicon carbide. In thisreview, the use of silicon carbide and SiC/HfB۲ composites are discussed using newlypublished sources.
نویسندگان
Mohammadhossein Rezaei Ghavamabad
Faculty of Materials and Manufacturing Processes, Malek Ashtar University of Technology, Tehran, Iran
Khanali Nekouee
Faculty of Materials and Manufacturing Processes, Malek Ashtar University of Technology, Tehran, Iran
Seyed Ali Khalife Soltani
Faculty of Materials and Manufacturing Processes, Malek Ashtar University of Technology, Tehran, Iran