Investigating the properties of silicon carbide and HfB۲ nanocomposite

سال انتشار: 1401
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 188

فایل این مقاله در 12 صفحه با فرمت PDF قابل دریافت می باشد

استخراج به نرم افزارهای پژوهشی:

لینک ثابت به این مقاله:

شناسه ملی سند علمی:

IMES16_139

تاریخ نمایه سازی: 25 اسفند 1401

چکیده مقاله:

Carbon parts have found wide applications in high temperature conditions, includingaerospace industries. But unfortunately, carbon parts, despite all the advantages theyhave, are quickly oxidized at a temperature of about ۵۰۰ degrees Celsius. The mainlimitation of using carbon parts at high temperatures is their strong oxidation. One of themost effective and widely used methods for protecting carbon materials is the use ofceramic coatings. As a mineral, silicon carbide has properties such as high thermalstability, high fracture toughness, low thermal expansion coefficient, etc. Therefore, it iswidely used in the manufacture of refractory devices, semiconductors, combustionengines, etc. Oxidation of silicon carbide can be active or passive. Active oxidationreduces the strength of the samples, while passive oxidation leads to the formation of acoherent silicon layer on the silicon carbide surface, thereby improving its performancein several applications. Silicon Carbide Composites As an interesting research topic,several works have been reported on the oxidation behavior of silicon carbide. In thisreview, the use of silicon carbide and SiC/HfB۲ composites are discussed using newlypublished sources.

کلیدواژه ها:

graphite ، HfB۲ ، oxidation resistance. Silicon carbide

نویسندگان

Mohammadhossein Rezaei Ghavamabad

Faculty of Materials and Manufacturing Processes, Malek Ashtar University of Technology, Tehran, Iran

Khanali Nekouee

Faculty of Materials and Manufacturing Processes, Malek Ashtar University of Technology, Tehran, Iran

Seyed Ali Khalife Soltani

Faculty of Materials and Manufacturing Processes, Malek Ashtar University of Technology, Tehran, Iran