A high-gain, low-noise ۳.۱–۱۰.۶ GHz ultra-wideband LNA in a ۰.۱۸μm CMOS

An ultra-wideband (UWB) common gate-common source (CG-CS) low-noise amplifier (LNA) in a ۰.۱۸μm CMOS technology is presented in this paper. To obtain a high and flat power gain with low noise and good input impedance matching in the entire ۳.۱–۱۰.۶ GHz UWB band among low power consumption, a capacitive cross-coupling fully differential amplifier with the current-reuse technique is proposed. The current–reuse technique is used to achieve a wideband and reduce power consumption. The capacitor cross coupling technique is used to gm-boosting and hence to improve the NF of the amplifier. Therefore, the dependency between noise figure (NF) and input impedance matching is reduced. The proposed CG-CS amplifier has a fairly low NF compared with the other previous works in similar technology. In addition, a good power gain over all bandwidth and a high isolation with good input/output impedance matching are achieved. The minimum NF is ۱.۸ dB, the maximum power gain is ۱۴.۲ dB, the inverse gain is <-۵۰ dB, the input and output matching S۱۱ and S۲۲ are <-۱۰.۳ dB and <-۱۱.۳ dB, respectively. Moreover, the input third-order intercept point (IIP۳) is -۵ dBm with core power consumption of ۱۰.۱ mW and supply voltage of ۱.۸ V.

کلیدواژه ها:

LNA ، en ، UWB ، CMOS technology ، Current-reuse technique ، Capacitive cross-coupling technique ، CG-CS amplifier