Ultra-Low Power Schmitt Triggers Based on Double-Gate CNTFETs with Tunable Hysteresis

In this paper, new tunable Schmitt triggers based on double-gate carbon nanotube field effect transistor (DG-CNTFET) are presented. The proposed inverter-based Schmitt triggers work with low supply voltage (۰.۸ V) and are very suitable for low voltage and low power applications. The adjustment of these Schmitt triggers are easily achieved by placing a DG-CNTFET transistor in the path of the internal and output nodes of the Schmitt triggers and by applying a control voltage to the back gate of the DG-CNTFET transistor without any additional mechanism. Based on the Hspice simulation results in the ۳۲ nm CNTFET process, the proposed Schmitt triggers can consume ۱۹.۸۹ pW and ۲۳.۰۱ pW respectively. Based on the evaluation of the output characteristic curves in terms of input, it was observed that the value of hysteresis in the proposed Schmitt triggers covers ۳۷.۵% and ۶۲.۵% of the supply voltage value, respectively.

کلیدواژه ها:

Schmitt trigger ، low voltage ، ultra-low power ، double-gate CNTFET transistor ، tunable hysteresis