Fabrication of SiNWs/PEDOT:PSS Heterojunction Solar Cells

Silicon nanowires (SiNWs) are synthesized through a metal-assisted chemical etching (MACE) method using Si(۱۰۰) substrates and silver (Ag) as a catalyst. Scanning electron microscope (SEM) images confirmed that length of prepared SiNWs was increased when etching time increased. The prepared SiNWs demonstrated considerably low light reflectance at a wavelength range of ۲۰۰–۱۱۰۰ nm. The photoluminescence (PL) spectra of the grown SiNWs showed a broad emission band peaked at a wavelength of about ۷۵۰ nm. A solar cell and photodetector based on heterojunction SiNWs/PEDOT:PSS were fabricated using SiNWs that prepared with different etching time and its J–V, sensitivity, and time response were investigated. The conversion efficiency of fabricated solar cell was increased from ۰.۳۹% to ۰.۶۸% when wire length decreased from ۲۴ µm to ۲۱ µm, respectively. However, the sensitivity of the heterojunction SiNWs/PEDOT:PSS photodetector was decreased from ۵۳۷۷۴% to ۳۶۸۲۶% when wire length decreased from ۲۴ µm to ۲۱ µm, respectively.

کلیدواژه ها:

Silicon nanowires ، PEDOT ، solar cell ، photodetector ، organic/inorganic device.