A Comparative Analysis of Structural and Electrochemical Properties of Graphene Oxide (GO) and Reduced Graphene Oxide (rGO) Synthesized by Using Hummer’s and Modified Hummer’s Method.
محل انتشار: مجله علم مواد و مهندسی ایران، دوره: 17، شماره: 4
سال انتشار: 1399
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 132
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شناسه ملی سند علمی:
JR_IJMSEI-17-4_003
تاریخ نمایه سازی: 24 بهمن 1401
چکیده مقاله:
Graphene oxide (GO) and reduced graphene oxide (rGO) is a semiconductor device which finds its many applications in the various electronic devices. In the present study GO and rGO thin sheets have been grown over Si wafers using Hummer’s and modified Hummer’s method and a comparison in the properties of the coatings have been carried out. The morphology of the sheets characterized by SEM revealed similar transparent sheet like structure for both the chemical synthesis. The diffraction pattern of GO and rGO prepared with modified Hummer’s method showed peak shift to lower diffraction angle from ۹.۹۶ o to ۹.۶۳ o and ۲۶.۴ o to ۲۶.۳ o respectively. The diffraction peaks were observed at diffraction phase of ۰۰۱ and ۰۰۲ crystal plane. FTIR spectra revealed presence of oxygen functional groups in GO thin sheets whereas peaks for oxygen functionalities are absent in rGO. The polarization curve indicated similar corrosion resistance of GO and rGO thin sheets grown under Hummer’s and modified Hummer’s. Capacitive property of rGO is better than GO as observed by the electrochemical analysis of GO and rGO..Graphene oxide (GO) and reduced graphene oxide (rGO) is a semiconductor device which finds its many applications in the various electronic devices. In the present study GO and rGO thin sheets have been grown over Si wafers using Hummer’s and modified Hummer’s method and a comparison in the properties of the coatings have been carried out. The morphology of the sheets characterized by SEM revealed similar transparent sheet like structure for both the chemical synthesis. The diffraction pattern of GO and rGO prepared with modified Hummer’s method showed peak shift to lower diffraction angle from ۹.۹۶ o to ۹.۶۳ o and ۲۶.۴ o to ۲۶.۳ o respectively. The diffraction peaks were observed at diffraction phase of ۰۰۱ and ۰۰۲ crystal plane. FTIR spectra revealed presence of oxygen functional groups in GO thin sheets whereas peaks for oxygen functionalities are absent in rGO. The polarization curve indicated similar corrosion resistance of GO and rGO thin sheets grown under Hummer’s and modified Hummer’s. Capacitive property of rGO is better than GO as observed by the electrochemical analysis of GO and rGO.
کلیدواژه ها:
نویسندگان
S. Das
Sikkim Manipal University
R. Ghadai
Sikkim Manipal University
A. Krishna
Sikkim Manipal University
A. Trivedi
Sikkim Manipal University
R. Bhujel
Sikkim Manipal University
S. Rai
Sikkim Manipal University
Sh. Ishwer
Sikkim Manipal University
K. Kalita
Veltech University
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