On Increasing of Integration Rate of Elements of a Current Source Circuit

In this paper we introduce an approach to increase integration rate of elements of a current source circuit. Framework the approach we consider a hetero-structure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.

کلیدواژه ها:

Current source circuit ، optimization of manufacturing ، analytical approach for modelling