Optimization of Bulk GaAs Substrate Removed Electrooptic Modulator Using the Finite Element Method

In this paper we have proposed a new structure for bulk GaAs Substrate removed electrooptic modulators. This new structure has been optimized by using the Finite Element Method to achieve a maximum matching between microwave and optical waves, half-wave voltage length product, VπL as low as 5 V-cm and electrical bandwidth as high as 220 GHz

کلیدواژه ها:

Substrate removed ، the Finite Element Method ، travelling wave ، Electrooptic coefficient ، semiconductor electrooptic modulators