Tunable Group Delay in a SOI Waveguide Based on Stimulated Raman Scattering

We analytically demonstrate the slow down factor enhancement of slow light induced by stimulated Raman scattering in a silicon-on insulator waveguide with a p-i-n Structure. An analytical model is derived for group delay simulation by taking into account of propagation loss and free carrier absorption. It is shown that applying a variable reverse bias voltage to the waveguide decreases the FCA and thus the maximum group delay can be enhanced. Tunable delay time is achievable through applying different bias voltages.

کلیدواژه ها:

stimulated Raman scattering ، group delay ، p-i-n structure ، free carrier absorption