Computational study of bandgap-engineered Graphene nano ribbon tunneling field-effect transistor (BE-GNR-TFET)

By applying tensile local uniaxial strain on ۵ nm of drain region and compressive local uniaxial strain on ۲.۵ nm of source and ۲.۵ nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach. Simulation results show that, compared to the conventional GNR-TFET, the BE-GNR-TFET enjoys from a better am-bipolar behavior and a higher on-current. Besides, the analog characteristic of the proposed structure such as transconductance (gm) and unity-gain frequency (ft) is also improved.

کلیدواژه ها:

Density of States (DOS) ، Graphene Nanoribbon (GNR) ، Non Equilibrium Green’s Function (NEGF) ، Tunneling Field Effect ، Unity Gain Frequency (ft)