The Effect of Interlayer Thickness on The Asymmetric InP-based Laser Performance

سال انتشار: 1400
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 248

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شناسه ملی سند علمی:

CSCG04_068

تاریخ نمایه سازی: 23 اسفند 1400

چکیده مقاله:

The InP- based laser diodes with asymmetric waveguide structure are theoretically designed using simulation software PICS۳D. The simulator self-consistently combines ۳D simulation of carrier transport, self-heating, and optical waveguiding. Through the simulation, behaviors oflaser diodes with different interlayer thicknesses are studied to determine the optimum thickness. Simulation results show that the laser diode with ۰.۰۷ micron interlayer thick exhibits good operation conditions

نویسندگان

Zahra Danesh Kaftroudi

Department of Engineering Sciences, Faculty of Technology and Engineering East of Guilan, University of Guilan, Rudsar-Vajargah, Iran

Abolfazl Mazandarani

Plasma & Nuclear Fusion Research School, Nuclear Science& Technology Research Institute, Tehran, Iran