Investigation of the impact of different ARC layers using PC۱D simulation: application to crystalline silicon solar cells

AbstractIn this work, the impact of six different anti-reflection coating (ARC) layers has been investigated using PC۱D simulation software. Simulation shows that the range of ۵۰۰–۷۰۰ nm would be suitable for designing an ARC. Designing a single-layer silicon nitride (Si۳N۴) ARC for ۶۰۰ nm wavelength and with a thickness of ۷۴.۲۵۷ nm, a silicon solar cell with ۲۰.۳۵% efficiency has been simulated. Very closely followed by a ۲۰.۳۴% efficient silicon solar cell with ۷۴.۸۷ nm thick zinc oxide (ZnO) ARC layer. Significant increase in efficiency has been observed by applying ARC in respect to not applying any kind of ARC. After efficient solar cell modeling, optimum efficiency of ۲۰.۶۷% is being achieved by using SiO۲ surface passivation and Si۳N۴ ARC layer. The effects on voltage, current, photovoltaic efficiency, reflectivity and external quantum efficiency due to ARCs are also represented in this work.

کلیدواژه ها:

Silicon solar cell ، Anti ، reflection coating (ARC) ، Surface passivation ، External quantum efficiency (EQE)