Heat capacity and entropy of Gaussian spherical quantum dot in the presence of donor impurity

AbstractThe energy states of shallow donor impurity in GaAs/AlGaAs quantum dot heterostructure with Gaussian potential have been calculated by the shifted ۱/N expansion method. The effects of the impurity on the ground state energy and average statistical energy have been investigated. The present calculations show that the donor impurity modifies significantly the electron energy levels of spherical quantum dot and thermal properties. In addition, we have also displayed the variations of the heat capacity and entropy of donor impurity in quantum dot with the radius, confining potential depth, dimension and temperature. The comparison shows that our results are in very good agreement with the theoretical reported work.

کلیدواژه ها:

Gaussian quantum dot ، Impurity ، binding energy ، Heat capacity ، Entropy ، ۱/ expansion