Intrinsic layer manipulation in Ge-Si lateral p-i-n photodetector for fast detection

In this study, the effect of intrinsic region’s width on dark current, photocurrent, and bandwidth has been investigated based on optical and electrical simulations of the presented Ge-Si lateral p-i-n photodetector. Detailed optical and electrical analysis have been carried out using finite difference time domain and drift- diffusion methods, respectively. The field absorption profiles and eye diagram calculations prove that the contacts positions and the width of the intrinsic region plays a main role in photodetector’s characteristics. The results show that the presented structure for intrinsic layer thickness of ۴μm provides the dark current, photocurrent, and responsivity of ۰.۲۸μA, ۶۴۰ μA, and ۰.۵۵ A/w, respectively. The bandwidth of ۲.۴ GHz has been acquired and the eye diagram analysis are obtained for ۲.۵ Gb/s, ۶ Gb/s, and ۱۰ Gb/s. The study provides promising design rule for real-time detection applicable in biophotonics and lab on a chip.

کلیدواژه ها:

Lateral photodetector ، dark current ، photocurrent ، eye diagram.