Calculati on of optic al properties of mu lti layers semiconductors by Kramers-Kronig method

Thin films produc ing technologies are developing rapidly and n owadays na no techniqu es are using in producing them. Thin films mechanica l properties are much depende nt on microstructure an d chemical composition, so it depen ds on depo sition techn ology. Conditions of thin films before deposition , deposition conditions and coating s are import ant [۱, ۲]. The use of magne sium fluoride as a sup port for different catalyt ic materials, transition metal oxides and binar y systems, more over for metallic catalysts [۳ -۹] is appealing. MgF۲ is a nonconductor wit h a wide ba nd gap and has good th ermal stability and considerable hardness also it is an optical material which stands transparent in a broad band of photo n energies [۱۰]. TiO۲ films unde r ultraviol et light act as antib acterial, de odorizing and self-cleaning (Matsubara et al ۱۹۹۵; Negishi et al ۱۹۹۵; Kikushi et al ۱۹۹۷ ). Converse ly, the band-gap energ y of TiO۲ is ~۳.۲e V, so, UV illuminati on is essen tial to ph oto activate this semiconductor wh ich is a wea kness of it. A number of techniques used to prepare films based on Ti O۲. TiO۲ ha s widely bee n studied a s a good form material for solar cell, water spl itting, and Photo catalysts [۱۱-۱۵]. In this pa per we calculate optica l propertie s of multi l ayers semiconductors su ch as MgF۲/MgF۲/glass and MgF۲/ TiO۲/glass by Kramers- Kronig method.

کلیدواژه ها:

Multilayer semiconductors ، Magnesiu m fluoride ، Titanium dioxide ، Kramers-Kronig.