Synthesis an d Study o f Nanostr uctural Properties of ZrO۲-CrO۲ Com posite

Some issues such as tunneling, leakage current and light atom penetration thr ough the film are threat ening the ultra thin Si O۲ be as a good dielec tric for future industrial and electronic device s.The gate SiO۲ di electric thickness in current c omplementary metal oxide semiconductor (C MOS) transistors is less than ۱ n m. Such a thin gate d ielectric can not preve nt leakage, tunneling currents an d borondiff usion. We have thus needed elec trical permittivity insulators as the alternative gate dielectrics for future of CMOS devices. The ZrO۲-CrO۲ gate stacks with h igh electrical permittivity show an amorphous structure of low temperature whic h can fill this gap. Zirco nium oxide is a very interesting material beca use of its thermal stability, its mech anical properties and its basic, aci dic, reducin g, and oxid izing surface properties. Pure zirconia has three allotropic forms monoclinic, tetr agonal and cubic. Eventhough the p hase bound aries are n ot exactly known yet as a functio n of temperature, many people have reported the temperature range of these phase boundaries. In this work, we have synthesized ZrO۲-CrO۲ which is suit able for CM OS. Its crystalline phas e can be us ed for the potential applications of th e ceramic – mesoporous structures as well[۱].

کلیدواژه ها:

Nano crystalline ، Ceramic com posite ، gate dielectric ، Sol-gel meth od.