Lantha num oxide as a diele ctric for t he future of CMIS devices

Vario us condition s for synthesis of pure nanoparticles have been studied, at relativel y low temperatures in air atmospheres. In this w ay some unwanted – bo nds have be en created o n the crystallite surface which can affect on nanostructur al propertie s. Therefore, it is imperative production of nanotransistor d evices without tunneling and leakage currents for growing of so clean and pure ultra thin films. The band gap and dielectric constant of La۲O۳ is ۵.۵ eV and ۳۰ respectively [۱]. L a۲O۳ does not cause the degradatio n of dielectric constant due to its h igher dielectric constant SiO۲ or Al۲ O۳. In this work we wer e synthesiz ed La۲O۳ via sol-gel method.

کلیدواژه ها:

Nano structures ، La۲O۳ ، AFM ، SEM.