Excited state of impurity binding energy i n symmetrical multiple quantum dots Ga N under electric and magnetic fields.

Quantum dots (Q Ds) are typi cal examples of nanosys tems where the electrons are confined in all three dimensi onal. The three dimensional nanos cale confinements of the charge carriers gives rise to comp lete quantu m nature to these structu res. The electron states in GaN QDs are highly affected by the built–in electric field due to the spontaneous polarization. In this article, effect s of electric and magnetic fields on impurity energy levels at different impurity position is considered.

کلیدواژه ها:

Binding energy ، Electric fiel d ، Magnetic field ، Symm etric quantum dots.