The study effects of Ga and As-doping in Armchai r and Zig zag forms of boron ph osphide n anotubes

Nanotubes have been a focus of researches and received increasing attention during the p ast ۱۰ years, due to their unique and fascinating properties, and wide potential applications. After the discov ery of carbon nanotubes in ۱۹۹ ۱ , the n anotubes co mposed of other chemical comp ositions have also been investigated. Among them, the binary mater ials composed of Group III–V wi de band-ga p semiconductor BPN Ts has attracted extensive interes t for applications as ele ctrical substrate and packaging material due to its high thermal conductivity and lo w coefficient of therm al expansio n that closely matches that of silicon (Si), and as reinforcement in structural composites owing to its excellent mechanical strength and chemical stability [۱-۳]. Recently, the na notube has b een proved to be a very good and useful tool for biomedical, molecular and cellular applic ations and in techniques, engineering, electr onics, optoelectronics, chemistry, a nd biochemistry too [۴-۵]. The aim of this work, the study of electronic structures and the eff ects of Gall ium and Ar senic doped on electrica l and chemical shielding parameters of armchair and zigza g models of boron phosphide nano tubes (BPN Ts).

کلیدواژه ها:

Born phosphide nano tube ، ch emical shielding ، DFT ، Gap Energy