Design and Optimization of ۰.۱۸μm CMOS Operational Amplifier for Use in High Frequencies Applications used Invasive Weed Optimization (IWO) algorithm

سال انتشار: 1400
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 179

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شناسه ملی سند علمی:

JR_CSE-1-1_003

تاریخ نمایه سازی: 23 آبان 1400

چکیده مقاله:

Day after day, the need for a high-performance CMOS OP-AMP is increasingly needed for use in electronic and communications applications as well as in the biomedical field. For this purpose, OP-AMP must operate at wide band-width and high voltage gain with low power consumption. To design a high-performance OP-AMP we must select a modern technology in order to harmonize the process parameters of MOSFET transistors with the technique of the proposed CMOS OP-AMP consisting of a group of these transistors. In this paper, ۰.۱۸µm TSMC technology with ±۱.۸V supply voltage CMOS-OP-AMP is used to design Two Stage OP-AMP. Simulation results are obtained using PSPICE (version ۱۶.۶.۰) program. The results showed that the designed techniques are highly efficient in terms of high frequency, high gain and low consumption of power. The Invasive Weed Optimization (IWO) algorithm was used to improve the performance parameters of the Two-Stage CMOS OP-AMP, and it implemented with MATLAB program. The simulation results of the proposed OP-AMP based-on IWO algorithm showed the GBP is improved into ۱۰۰%, the voltage gain increased around ۱۷% , the power consumption decreased by ۳۲% and CMRR increased by ۲۰% .From the result we can say that the IWO is a powerful algorithm can be used to improve other designs.

کلیدواژه ها:

نویسندگان

Salih Kadhom

Department of Electronics, Faculty of Electrical and Computer Engineering, University of Kashan, Kashan, Iran

Daryoosh Dideban

Department of Electronics, Faculty of Electrical and Computer Engineering, University of Kashan, Kashan, Iran

Hassan Motlaq

Deparment of Engineering, University of Babylon, Iraq