Design of LNA-LPF (UWB) Matching with Improve Gain & Linearity in the Application of Wireless Receiver

This paper simulates the LNA circuit using HEMT transistor technology, which is designed in three stages of transistor matching and LPF impedance steps in the circuit input, Frequency bandwidth is the UWB (3.1-10.6GHz). The purpose of the circuit design is to increase the gain and improved of noise figure and matching impedance signal input. By creating a LPF, the impedance matching circuit and the frequency balance are improved. It is designed with step-up impedance techniques. This technique in the UWB band has a perfect match in the matching of the signal input impedance, which transmits the signal to a low-noise LNA circuit. The circuit design is two-block LPF and LNA. This circuit is ability of fabricated in MMIC-RF design. The value is S21 equal 33.75dB in frequency 7GHz. The circuit s stability is at a frequency of 11GHz in 4.425dB, and NF equal 2.68dB in the frequency 11GHz. This circuit is simulated using ADS software.